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HYSTERESIS AND EDDY-CURRENT RELAXATION IN SIFE MATERIALS

作者:科技文献资料网 时间:2017-07-26 12:26:23  浏览:9879   来源:科技文献资料网
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[唯一标识符]:CDSTIC.ISTP.1226695
[文献来源]:科学技术会议录索引(ISTP)
[文献类型]:科技会议
[标题]:HYSTERESIS AND EDDY-CURRENT RELAXATION IN SIFE MATERIALS
[作者]:E Usak;P Krivosik
[出版单位]:INST PHYSICS ACAD SCI CZECH REPUBLICPRAGUE
[ISSN_ISBN]:0011-4626
[会议名称]:12th Czech and Slovak Conference on Magnetism,KOSICE, SLOVAKIA,July 12-15, 2004
[来源]:CZECHOSLOVAK JOURNAL OF PHYSICS;CZECHOSLOVAK JOURNAL OF PHYSICS,pp D43-D46
[主办单位]:PJ Safarik Univ;Slovak Acad Sci, Inst Expt Phys, Fac Sci
[地址]:E Usak,SLOVAK_TECH_UNIV, FAC ELECT ENGN, DEPT ELECTROMAGNET THEORY, ILKOVICOVA 3, BRATISLAVA 81219, SLOVAKIA
[专业领域]:PHYSICS, MULTIDISCIPLINARY
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[唯一标识符]:CDSITC.AEROSPACE.A97-10588
[文献来源]:美国航空航天数据库(aerospace)
[资源原始索取号]:A1997-10588; Reference AN: A97-10588
[标题]:Amorphous silicon thin film photodetectors with high sensitivity and selectivity in the ultraviolet spectrum
[作者]:Naletto Giampiero; Nicolosi Piergiorgio; Pace Emanuele; de Cesare G; Irrera F; Palma F
[书名]:IN: EUV, X-ray, and gamma-ray instrumentation for astronomy VII; Proceedings of the Meeting, Denver, CO, Aug. 7-9, 1996 (A97-10536 01-19), Bellingham, WA, Society of Photo-Optical Instrumentation Engineers (SPIE Proceedings. Vol. 2808), 1996, p. 605-612
[文摘]:A new family of photodetectors based on hydrogenated amorphous silicon (a-Si:H) and silicon carbide (a-SiC:H) is described. They are p-i-n photodiodes whose thin layers are grown by Glow Discharge on cheap substrates as glass or flexible materials. Modulating the absorption profile in the semiconductor and the thickness of the layers, it is possible to select, during the growing process, the wavelength range where the photodetector is more sensitive. A first-generation prototype of photodetectors optimized for UV detection was tested at room temperature and with no external bias voltage, illuminating it with visible and VUV radiation. The results show that the measured quantum efficiency is above 15 percent in the 58.4-250 nm spectral range and about 300 times lower at longer wavelengths. An improved second generation has been also tested in the same experimental conditions and the preliminary data exhibit a better noise level, a higher response stability, and an enhanced efficiency. A linear dependence on the radiation intensity has been verified over three orders of magnitude at 400 nm. Noise figure evaluation and response times are presented. (Author)
[关键词]:THIN FILMS; AMORPHOUS MATERIALS; SPECTRAL SENSITIVITY; PHOTOMETERS ; ULTRAVIOLET DETECTORS; ULTRAVIOLET RADIATION; QUANTUM EFFICIENCY; PRODUCT DEVELOPMENT
[出版年份]:1996
[专业领域]:ELECTRONICS AND ELECTRICAL ENGINEERING
[唯一标识符]:CDSTIC.ISTP.1155497
[文献来源]:科学技术会议录索引(ISTP)
[文献类型]:科技会议
[标题]:The Self-Mixing Interference Inside a Laser-Diode - Application to Displacement, Velocity and Distance Measurement
[作者]:T Bosch;N Servagent;F Gouaux;G Mourat
[出版单位]:Spie-Int Society Optical EngineeringBellingham
[ISSN_ISBN]:0-8194-2933-3
[会议名称]:Conference on Laser Interferometry IX - Techniques and Analysis,San Diego, CA,July 20-21, 1998
[来源]:LASER INTERFEROMETRY IX: TECHNIQUES AND ANALYSIS,pp 98-108
[系列名称]:PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
[编辑者]:EM Kujawinska;GM Brown;M Takeda
[主办单位]:SPIE - Soc Photo-Opt Inst Engn
[地址]:T Bosch,Ecole_Mines, Dept Automat Control & Prod Syst, 4 Rue Alfred Kastler, POB 20 722, F-44307 Nantes 3, France
[专业领域]:Optics,Mechanics

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